Samsung Announces New R&D Plans To Strengthen Its Lead In Memory
Samsung Electronics is engaged in the research and development of 11nm dynamic random access memory (DRAM) and 9th generation 3D NAND flash memory. The goal is to rise to the top of the industry, achieve mass production plans and maintain technological leadership.
According to Samsung and IT Chosun , Jung Ba Lee, president and general manager of Samsung's memory division, recently said that the 11nm level dynamic random access memory (DRAM) currently being developed will reach the highest level of integration in the industry. As for the ninth generation of 3D NAND, it aims to achieve the highest number of layers in the industry using dual-stack technology and is expected to start mass production in early 2024.
The memory industry is moving toward NAND with 300 or more layers. In fact, the dual-stack technology used by Samsung manufactures NAND in two stages and then fuses them together.
In comparison, SK Hynix plans to use three-layer technology, manufacturing 120 layers, 110 layers and 91 layers of 3D NAND separately and combining them into a single 321-layer chip. Samsung's two-pronged approach is more economical and efficient in manufacturing, but also more complex.
Industry sources also indicated that Samsung's memory business will recover in the second half of 2023 after a decline in the first half. Furthermore, in response to expected economic growth in 2024, Samsung is investing heavily in research and development. It recently developed the industry's largest 32GB DDR5 DRAM capacity. The goal is to achieve a 1 TB modular solution in the future.
Lee noted that Samsung's DRAM business is investing in research and development of new 3D structures and materials. As for the NAND business, it aims to increase the number of layers while reducing stack height and reducing interference between memory cells. To improve the input and output (I/O) speed of 3D NAND, they are going to use next-generation technologies such as new architectures.
With the advent of the era of artificial intelligence, the application areas of memory are gradually expanding from the existing areas of computers and mobile devices to data centers.
Samsung believes that along with storage, memory should continue to improve processing functions as well. It includes implementing technologies such as in-memory processing (PIM) and near-memory processing (PNM) in high-bandwidth memory (HBM) and flash memory (CXL) modules to improve data processing capabilities and increase capacity. efficiency
He assured that they will expand the production of products with high added value and modern technological processes. At the same time, they will continue to invest in research and development in response to memory demand for new applications such as large-scale artificial intelligence. In addition, they will improve the performance of their memory production lines to address issues such as high variability in memory demand and long waiting times.
Samsung plans to hold Memory Technology Day 2023 in Silicon Valley on October 20, 2023, where it will showcase its latest memory technologies, products and future strategies.
